| PART |
Description |
Maker |
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AM29SL800DT90EI AM29SL800DT90WCC AM29SL800DT90WAC |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 120 ns, PBGA48
|
Advanced Micro Devices, Inc.
|
| EM620FU16AS-70L EM620FU16AU-45L EM620FU16AU-70L EM |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
http://
List of Unclassifed Manufacturers
Emerging Memory & Logic Solutions Inc
ETC
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| K6F8016T6C K6F8016T6C-FF55 K6F8016T6C-FF70 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BS616LV8023BC BS616LV8023BI BS616LV8023 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| BS616UV8010BI BS616UV8010 BS616UV8010BC |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| LP62S4096EX-70LLT LP62S4096EV-70LLT LP62S4096EU-70 |
512K X 8 BIT LOW VOLTAGE CMOS SRAM 12k × 8位低电压CMOS的SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| LP62S4096EX-70LLI LP62S4096EX-55LLI LP62S4096EV-70 |
512K X 8 BIT LOW VOLTAGE CMOS SRAM 12k × 8位低电压CMOS的SRAM
|
http://
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
|
| BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV402 |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| BS62LV4001TI BS62LV4001 BS62LV4001DC BS62LV4001DI |
Low Power/Voltage CMOS SRAM 512K X 8 bit 低功电压CMOS SRAM的为512k × 8
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
